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This Infographic will provide scientists with more information on controlling particle, molecular, and metallic contamination in semiconductor manufacturing using ICP-MS and other trace-elemental screening techniques, allowing you to strengthen contamination control and reduce yield loss.
What you will learn about:
- The front-end wafer manufacturing process flow
- How particles, molecules, and metals each contaminate ICs
- Detection limits of TXRF, VPD-TXRF, and VPD-ICP-MS
- Why ICP-MS enables ultra-trace contamination detection
- How AI and automation are advancing contaminant detection
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More Information
Front-end wafer manufacturing involves hundreds of process steps, and even trace-level contamination from particles, molecules, or metals can distort lithography patterns, alter surface chemistry, or damage insulating layers and cause short circuits. This infographic from Wiley and Agilent maps the front-end wafer manufacturing process flow and compares how TXRF, VPD-TXRF, and VPD-ICP-MS perform on detection limits, from roughly 10¹⁰–10¹¹ atoms/cm² down to 5×10⁵–5×10⁸ atoms/cm². It also covers why ICP-MS is a preferred tool for ultra-trace elemental analysis and how automation and AI are shaping the future of contaminant detection in semiconductor fabs.
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